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Manufacturer
Unknown
MPN
SI4435DDY-T1-GE3
MOQ
715
Available
0
Condition
New
Unknown SI4435DDY-T1-GE3 - Xg2v2, Fet-silicon;si4435ddy-t1-ge3,p,-30v,-11 Xg2v2
The Unknown SI4435DDY-T1-GE3 - Xg2v2 is a high-quality FET (Field-Effect Transistor) made of silicon. It is part of the Xg2v2 series, which is known for its advanced technology and superior quality.
Its compact size and low power consumption make it ideal for use in portable devices and other space-constrained applications. It also has a low on-resistance, which helps to minimize power loss and improve overall performance.
Specifications | |
| Mounting Style: | SMD/SMT |
| Package/Case: | SOIC-8 |
| Transistor Polarity: | P-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Id - Continuous Drain Current: | 11.4 A |
| Rds On - Drain-Source Resistance: | 24 mOhms |
| Vgs - Gate-Source Voltage: | - 20 V, 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Qg - Gate Charge: | 50 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 5 W |
Please refer to the following attachments for additional details on the product.
No specifications available.
