607-units min. Vishay Intertechnology, Inc. Mosfet -30v Vds 20v Vgs - SI4435DDY-T1-GE3
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Manufacturer
Vishay Intertechnology, Inc.
MPN
SI4435DDY-T1-GE3
MOQ
607
Available
0
Condition
New
Vishay Intertechnology, Inc. SI4435DDY-T1-GE3 - Mosfet -30v Vds 20v Vgs
The Vishay Intertechnology SI4435DDY-T1-GE3 is a high-quality Mosfet designed for use in a variety of electronic applications. It is also designed to operate at high temperatures.
The SI4435DDY-T1-GE3 is a versatile component that can be used in a wide range of electronic devices, including power supplies, motor control circuits, and audio amplifiers. It also has a low gate charge, which helps to reduce power losses and improve overall system efficiency.
Specifications | |
| FET Type | P-Channell |
| Technology | MOSFET( Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 11.4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 9.1A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 15 V |
| Power Dissipation (Max) | 2.5W (Ta), 5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Please refer to the following attachments for additional details on the product.
No specifications available.