125-units min. Nanya Technology NT5CC128M16JR-EK DRAM Chip DDR3L SDRAM 2Gb - NT5CC128M16JR-EK
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Manufacturer
Nanya Technology
MPN
NT5CC128M16JR-EK
MOQ
125
Available
0
Condition
Used
Nanya Technology NT5CC128M16JR-EK DRAM Chip DDR3L SDRAM 2Gb
The Nanya Technology NT5CC128M16JR-EK is a high-performance DRAM chip designed for use in various electronic devices. This chip features DDR3L SDRAM technology, which offers improved power efficiency and faster data transfer speeds compared to previous generations of DDR memory.
Applications:
- Embedded memory in electronic devices: The NT5CC128M16JR-EK is suitable for embedded memory applications in various electronic devices such as smartphones, tablets, digital cameras, and more.
- Smartphones and tablets: This DDR DRAM is ideal for use in high-performance mobile devices that require fast data transfer and low power consumption.
- Digital cameras: The NT5CC128M16JR-EK is suitable for digital camera applications where high-speed data transfer and low power consumption are essential.
- Automotive electronics: This DDR DRAM is suitable for use in automotive electronics such as infotainment systems, navigation systems, and more.
- More applications: This DDR DRAM can be used in various other applications such as medical devices, gaming consoles, and more.
Specifications | |
| HTS | 8542.32.00.36 |
| Chip Density (bit) | 2G |
| Number of Internal Banks | 8 |
| Number of Bits/Word (bit) | 16 |
| Maximum Clock Rate (MHz) | 1866 |
| Address Bus Width (bit) | 17 |
| Minimum Operating Supply Voltage (V) | 1.283 |
| Operating Current (mA) | 115 |
| Maximum Operating Temperature (°C) | 95 |
| Number of I/O Lines (bit) | 16 |
| Pin Count | 96 |
| Organization | 128Mx16 |
| Number of Words per Bank | 16M |
| Data Bus Width (bit) | 16 |
| Maximum Access Time (ns) | 0.195 |
| Interface Type | SSTL_135 |
| Maximum Operating Supply Voltage (V) | 1.45 |
| Mounting | Surface Mount |
No specifications available.